Study of Etching Processes for SiC Defect Analysis

Ping Wu; Xue Ping Xu; Ilya Zwieback; John Hostetler

doi:10.4028/www.scientific.net/MSF.897.363

Paper Titles

Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C
p.344

Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
p.348

Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion
p.352

Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ
p.356

Study of Etching Processes for SiC Defect Analysis
p.363

Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation
p.367

4H-SiC Trench Structure Fabrication with Al₂O₃ Etching Mask
p.371

Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
p.375

Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers
p.379

HomeMaterials Science ForumMaterials Science Forum Vol. 897Study of Etching Processes for SiC Defect Analysis

Study of Etching Processes for SiC Defect Analysis

Abstract:

We investigated selective etching of SiC in molten KOH + NaOH + Na₂O₂ mixtures in application to defect analysis. Etch rate was measured as a function of etchant composition, temperature and other process variables. Optimal etching conditions were established for reliable differentiation between TSDs, TEDs, BPDs and stacking faults (SF).