Combined N2O and Phosphorus Passivations for the 4H-SiC/SiO2 Interface with Oxide Grown at 1400°C

Hua Rong; Yogesh K. Sharma; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.897.344

Paper Titles

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
p.327

Properties of SiO₂/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
p.331

Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing
p.335

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
p.340

Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C
p.344

Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
p.348

Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion
p.352

Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ
p.356

Study of Etching Processes for SiC Defect Analysis
p.363

HomeMaterials Science ForumMaterials Science Forum Vol. 897Combined N2O and Phosphorus Passivations for the...

Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C

Abstract:

Phosphorus (P) passivation is more effective than N₂O passivation in improving the 4H-SiC/ SiO₂interface by reducing the number of traps at the 4H-SiC/SiO₂ interface. This paper investigated the effect of combined N₂O and phosphorus POA on the 4H-SiC/SiO₂ interface with oxides grown at 1400°C and used in the fabrication of MOS capacitors and FETs. These fabricated devices are also compared with the ones which have been N₂O and P passivations only. Results demonstrated that the phosphorus passivation technique provides the highest peak field-effect mobility for 4H-SiC MOSFETs (60 cm²/V.s), which is about 5 times higher than the value obtained for devices with N₂O annealing. The combined N₂O and phosphorus passivation technique, however, has shown a slight decrease in the peak field effect mobility value compared to the phosphorus passivation technique, but it is still much higher than the N₂O passivation technique (12 cm²/V.s).

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Periodical:

Materials Science Forum (Volume 897)

Pages:

344-347

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.344

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Online since:

May 2017

Authors:

Hua Rong*, Yogesh K. Sharma, Philip Andrew Mawby

Keywords:

4H-SiC MOSFET, High Temperature Oxidation, Interface Trap Density, N₂O Passivation, Phosphorus Passivation

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