Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

Atthawut Chanthaphan; Yoshihito Katsu; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.897.340

Paper Titles

Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO₂/SiC Interface Properties
p.323

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
p.327

Properties of SiO₂/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
p.331

Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing
p.335

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
p.340

Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C
p.344

Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
p.348

Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion
p.352

Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ
p.356

HomeMaterials Science ForumMaterials Science Forum Vol. 897Structure and Surface Morphology of Thermal SiO2...

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

Abstract:

Surface morphology and electrical properties of silicon dioxide (SiO₂) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO₂ capping prior to MEO. The Ba atoms at the SiO₂/SiC interface were found to diffuse to the oxide surface through the deposited SiO₂ capping layer, and then the Ba density reduced to ~10¹⁴ cm^-2 before stable MEO. The resulting SiO₂/SiC interface showed the reduced interface state density but the insulating property of the oxides was significantly degraded.