Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties

Takuji Hosoi; Daisuke Nagai; Mitsuru Sometani; Takayoshi Shimura; Manabu Takei; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.897.323

Paper Titles

Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
p.303

Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
p.307

Effect of 3C-SiC Irradiation with 8 MeV Protons
p.311

Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
p.315

Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO₂/SiC Interface Properties
p.323

Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
p.327

Properties of SiO₂/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
p.331

Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing
p.335

Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
p.340

HomeMaterials Science ForumMaterials Science Forum Vol. 897Ultrahigh-Temperature Oxidation of 4H-SiC(0001)...

Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO₂/SiC Interface Properties

Abstract:

This paper reviews our recent work on ultrahigh-temperature oxidation of 4H-SiC(0001) surfaces. Our rapid thermal oxidation experiments demonstrated the reaction-limited linear growth at temperatures ranging from 1200 to 1600°C. The Arrhenius plot of linear growth rate of thermal oxidation can be fitted by a linear line, and the activation energy of oxide growth in dry O₂ oxidation was estimated to be 2.9 eV. We also found that unintentional oxidation during the cooling down process severely degrades SiO₂/SiC interface properties, resulting in positive flatband voltage shift (V_FB) and hysteresis in capacitance-voltage (C-V) characteristics regardless of oxidation temperature. By effectively suppressing oxide growth during the cooling process, we have clarified that SiO₂/SiC interface properties depend on oxidation temperature and the lowest interface state density was obtained for the oxide formed at 1450°C.

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Materials Science Forum (Volume 897)

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323-326

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.323

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Online since:

May 2017

Authors:

Takuji Hosoi*, Daisuke Nagai, Mitsuru Sometani, Takayoshi Shimura, Manabu Takei, Heiji Watanabe

Keywords:

Activation Energy, SiO₂/SiC Interface Property, Thermal Oxidation

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References

[1] J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams and L. C. Feldman, Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface, J. Appl. Phys. 103 (2008).

DOI: 10.1063/1.2940736

Google Scholar

[2] Y. Katsu, T. Hosoi, Y. Nanen, T. Kimoto, T. Shimura and H. Watanabe, Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices, Mater. Sci. Forum 858 (2016) 599-602.

DOI: 10.4028/www.scientific.net/msf.858.599

Google Scholar

[3] S. M. Thomas, M. R. Jennings, Y. K. Sharma, C. A. Fisher and P. A. Mawby, Impact of the oxidation temperature on the interface trap density in 4H-SiC MIS capacitors, Mater. Sci. Forum 778-780 (2014) 599-602.

DOI: 10.4028/www.scientific.net/msf.778-780.599

Google Scholar

[4] H. Naik and T. P. Chow, 4H-SiC MOS capacitors and MOSFET fabrication with gate oxidation at 1400°C, Mater. Sci. Forum 778-780 (2014) 607-610.

DOI: 10.4028/www.scientific.net/msf.778-780.607

Google Scholar

[5] S. M. Thomas, Y. K. Sharma, M. A. Crouch, C. A. Fisher, A. Perez-Tomas, M. R. Jennings and P. A. Mawby, Enhanced field effect mobility on 4H-SiC by oxidation at 1500°C, IEEE J. Electron. Dev. Soc. 2 (2014) 114-117.

DOI: 10.1109/jeds.2014.2330737

Google Scholar

[6] T. Hosoi, D. Nagai, M. Sometani, Y. Katsu, H. Takeda, T. Shimura, M. Takei and H. Watanabe, submitted to Appl. Phys. Lett.

Google Scholar

[7] Y. Song, S. Dhar, L. C. Feldman, G. Chung, and J. R. Williams, Modified Deal Grove model for the thermal oxidation of silicon carbide, J. Appl. Phys. 95 (2004) 4953.

DOI: 10.1063/1.1690097

Google Scholar

[8] T. Akiyama, A. Ito, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, K. Shiraishi, First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence, Surf. Sci. 641 (2015) 174-179.

DOI: 10.1016/j.susc.2015.06.028

Google Scholar