Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals

Xiang Long Yang; Xiu Fang Chen; Yan Peng; Xue Jian Xie; Xiao Bo Hu; Xian Gang Xu; Peng Yu; Rui Qi Wang

doi:10.4028/www.scientific.net/MSF.897.307

Paper Titles

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Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide
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Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
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Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
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Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
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Effect of 3C-SiC Irradiation with 8 MeV Protons
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Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
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Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO₂/SiC Interface Properties
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Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Growth and Temperature-Depending Raman...

Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals

Abstract:

Different nitrogen-doped 4H-SiC single crystals were grown by the physical vapor transport method through mixing nitrogen gas to the argon growth atmosphere in the composition range from 0% to 10%. The electrical properties of the crystals, including resistivity and mobility were measured by Hall effect and contactless eddy current measurements. The Raman spectra of different N-doped 4H-SiC single crystals were investigated from 173 to 473 K. The temperature and doping dependence of optical modes was analyzed with anharmonic effect. The phonon lifetime was derived from the linewidths of Raman spectra via the energy-time uncertainty relation.