Effect of Neutron Irradiation on SiC Etching in KOH Melt

Evgeniy Mokhov; Olga P. Kazarova; Sergey Nagalyuk

doi:10.4028/www.scientific.net/MSF.897.291

Paper Titles

Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
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DLTS Study on Al⁺ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes
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Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate
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Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
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Effect of Neutron Irradiation on SiC Etching in KOH Melt
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Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide
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Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
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Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
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Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Effect of Neutron Irradiation on SiC Etching in...

Effect of Neutron Irradiation on SiC Etching in KOH Melt

Abstract:

The effect of reactor neutron irradiation on the SiC crystals etching rate in KOH melt has been investigated. It is shown that at high doses of irradiation (10¹⁹ - 10²¹ neutrons/cm²) the SiC etching rate sharply increases, especially in the [0001] Si direction, leading to essential reduction of orientation anisotropy of polar {0001} faces etching. The increased rate of irradiated crystals etching remains after high-temperature annealing, up to the temperatures of 1400 – 1600 °C. The results are explained by the presence of meta-stable clusters of radiation defects which are the centers of increased chemical activity in the irradiated crystals.

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Materials Science Forum (Volume 897)

Pages:

291-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.291

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Online since:

May 2017

Authors:

Evgeniy Mokhov*, Olga P. Kazarova, Sergey Nagalyuk

Keywords:

Cluster of Defects, Etching Rate, KOH Melt, Neutron Irradiation, Silicon Carbide (SiC)

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