Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates

Sylvie Contreras; Leszek Konczewicz; Roxana Arvinte; Jaweb Ben Messaoud; Tian Lin Wang; Hervé Peyre; Thierry Chassagne; Marcin Zielinski; Sandrine Juillaguet

doi:10.4028/www.scientific.net/MSF.897.275

Paper Titles

On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC
p.254

Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination
p.258

Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
p.262

Density Functional Theory on NV Center in 4H SiC
p.269

Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
p.275

DLTS Study on Al⁺ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes
p.279

Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate
p.283

Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
p.287

Effect of Neutron Irradiation on SiC Etching in KOH Melt
p.291

HomeMaterials Science ForumMaterials Science Forum Vol. 897Comparative Study of p-Type 4H-SiC Grown on n-Type...

Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates

Abstract:

Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

275-278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.275

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Online since:

May 2017

Authors:

Sylvie Contreras*, Leszek Konczewicz, Roxana Arvinte, Jaweb Ben Messaoud, Tian Lin Wang, Hervé Peyre, Thierry Chassagne, Marcin Zielinski, Sandrine Juillaguet

Keywords:

4H-SiC, AFM, Aluminium Doping, Hall Effect, LTPL, Mobility, Secondary Ion Mas Spectrometry (SIMS), Substrate Effect

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