Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.
Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
S. Contreras et al., "Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates", Materials Science Forum, Vol. 897, pp. 275-278, 2017