Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates

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Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.

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Edited by:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis

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275-278

Citation:

S. Contreras et al., "Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates", Materials Science Forum, Vol. 897, pp. 275-278, 2017

Online since:

May 2017

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[1] J. Pernot, S. Contreras and J. Camassel, J. Appl. Phys. 98, 023706 (2005).

[2] A. Parisini and R. Nipoti, J. Appl. Phys. 114, 243703 (2013).

[3] S. Contreras, L. Konczewicz, P. Kwasnicki, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, M. Kayambaki, S. Juillaguet, K. Zekentes, Mat. Sci. Forum 858, 249 (2016).

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.249

[4] S. Contreras, L. Konczewicz, R. Arvinte, H. Peyre, T. Chassagne, M. Zielinski, S. Juillaguet, Phys. Status Solidi A, 1–8 (2016).

[5] M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet and H. Peyre, Mat. Sci. Forum 858, (2016) 137-142.

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.137

[6] L.L. Clemen, R.P. Devaty, M.F. Mac Millan, M. Yoganathan, W.J. Choyke, D.J. Larki, J.A. Powell, J.A. Edmond and H.S. Kong, Appl. Phys. Let. 62, 2953 (1993).

[7] A. Henry, A. Ellison, U. Forsberg, B. Magnusson, G. Pozina and E. Janzen, Mat. Sci. Forum 389-393, 593 (2002).

[8] H. Peyre, J.W. Sun, J. el Hassam, S. Juillaguet, A. Henry, S Contreras, P. Brosselard and J. Camassel. Mater. Sci. Forum. 711, 164 (2012) ; Pawel Kwasnicki, PhD Thesis (2014) University Montpellier 2.