Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles

Matthias Kocher; Michael Niebauer; Mathias Rommel; Volker Haeublein; Anton J. Bauer

doi:10.4028/www.scientific.net/MSF.897.287

Paper Titles

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Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate
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Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
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Effect of Neutron Irradiation on SiC Etching in KOH Melt
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Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Point Contact Current Voltage Measurements of...

Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles

Abstract:

Point contact current voltage (PCIV) measurements were performed on 4H-SiC samples, both for n- an p-doped epitaxial layers as well as samples with rather shallow doping profiles realized by N- or Al-implantation in a range from 10¹⁶ cm^-3 to 10¹⁹ cm^-3. Surface preparation and measurement parameters were investigated in order to determine their influence on the measured resistance profiles. Furthermore depth profile measurements were performed on both an epitaxial layer as well as on implanted samples. These depth profiles could be measured reproducibly and showed good agreement with expected profiles for Al-implanted samples as well as for epitaxial layer whereas for N-implanted samples deviations between measured and expected profiles could be observed. It could be proven that PCIV profiling technique is a promising method for characterizing doped profiles in 4H-SiC, especially on Al-implanted samples.

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Periodical:

Materials Science Forum (Volume 897)

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287-290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.287

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Online since:

May 2017

Authors:

Matthias Kocher*, Michael Niebauer, Mathias Rommel, Volker Haeublein, Anton J. Bauer

Keywords:

4H-SiC, Doping Profile, Point Contact Current Voltage

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References

[1] Fukuda Y., Nishikawa K., Shimizu M., Iwakuro H., Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide, Materials Science Forum (2002) 389-393, 671-674.

DOI: 10.4028/www.scientific.net/msf.389-393.671

Google Scholar

[2] Hillard, R. J., Mazur, R. G., Berkowitz, H. L. and Choudhury, P. R, Profiling of silicon and III-V compounds by point contact techniques, Solid State Technology (1989) 32, 119-124.

Google Scholar

[3] Schroder, D. K., Semiconductor Material and Device Characterization, third ed. New York: John Wiley & Sons (2006).

Google Scholar

[4] Kinder, R., Hulenyi, L., Hudec, L., Chmel, L., Kuruc, M., An automatic measurement system with spreading resistance and PCIV profiling for characterization of semiconductors, Journal of Electrical Engineering (2007) 58, 165-168.

Google Scholar

[5] Calcagno, L., Raineri, V., Depth carrier profiling in silicon carbide, Current Opinion in Solid State and Materials Science (2002) 6, 47-54.

DOI: 10.1016/s1359-0286(02)00003-7

Google Scholar

[6] Kimoto, T., Cooper, J.A., Fundamentals of silicon carbide technology: Growth, characterizaton, devices and applications, John Wiley & Sons (2014).

Google Scholar