Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells

Quan Bao Ma; Patricia Almeida Carvalho; Augustinas Galeckas; Alexander Azarov; Sigurd Hovden; Annett Thøgersen; Daniel N. Wright; Spyros Diplas; Ole Martin Løvvik; Valdas Jokubavicius; Jian Wu Sun; Mikael Syväjärvi; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.897.299

Paper Titles

Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate
p.283

Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
p.287

Effect of Neutron Irradiation on SiC Etching in KOH Melt
p.291

Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide
p.295

Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
p.299

Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
p.303

Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
p.307

Effect of 3C-SiC Irradiation with 8 MeV Protons
p.311

Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
p.315

HomeMaterials Science ForumMaterials Science Forum Vol. 897Characterization of B-Implanted 3C-SiC for...

Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells

Abstract:

Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×10¹⁷ atoms/cm² in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 °C for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×10²¹ cm^-3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.

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Materials Science Forum (Volume 897)

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299-302

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https://doi.org/10.4028/www.scientific.net/MSF.897.299

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Online since:

May 2017

Authors:

Quan Bao Ma*, Patricia Almeida Carvalho, Augustinas Galeckas, Alexander Azarov, Sigurd Hovden, Annett Thøgersen, Daniel N. Wright, Spyros Diplas, Ole Martin Løvvik, Valdas Jokubavicius, Jian Wu Sun, Mikael Syväjärvi, Bengt Gunnar Svensson

Keywords:

3C-SiC, Boron, Characterisation, Cubic, Implantation, Intermediate Band, Photovoltaics, Silicon Carbide (SiC), Solar Cells

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