Effect of 3C-SiC Irradiation with 8 MeV Protons

Abstract:

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm^-1. The full compensation of samples with an initial concentration of (1-2) x 10¹⁸ cm ^-3 was estimated to occur at doses of about 6 x 10¹⁵ cm ^-2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.

• Periodical: Materials Science Forum (Volume 897)
• Pages: 311-314
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.897.311
• Online since: May 2017
• Authors: Alexander A. Lebedev*, Boris Ya. Ber, Gagik A. Oganesyan, Sergey V. Belov, Natalia. V. Seredova, Irina P. Nikitina, Sergey P. Lebedev, Lev V. Shakhov, Vitalii V. Kozlovski
• Keywords: 3C-SiC, Carrier Removal Rate, Hall Effect, Mobility, Photoluminescence, Proton Irradiation, Sublimation

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