Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide

Rudolf Elpelt; Bernd Zippelius; Stefan Doering; Uwe Winkler

doi:10.4028/www.scientific.net/MSF.897.295

Paper Titles

DLTS Study on Al⁺ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes
p.279

Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate
p.283

Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
p.287

Effect of Neutron Irradiation on SiC Etching in KOH Melt
p.291

Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide
p.295

Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
p.299

Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
p.303

Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
p.307

Effect of 3C-SiC Irradiation with 8 MeV Protons
p.311

HomeMaterials Science ForumMaterials Science Forum Vol. 897Employing Scanning Spreading Resistance Microscopy...

Employing Scanning Spreading Resistance Microscopy (SSRM) for Improving TCAD Simulation Accuracy of Silicon Carbide

Abstract:

Computer-Aided-Design for the prediction of the technology process and the physical device properties (TCAD) is a key tool for the development and improvement of new device concepts as well as for the analysis and understanding of device properties and device behavior under application conditions. Apart from physical device models and parameters the precise process simulation of implanted doping profiles is mandatory for a sufficient prediction quality of the subsequent device simulations. In order to verify and improve the accuracy of process simulation, we employ the – for silicon carbide – relatively new method of Scanning Spreading Resistance Microscopy (SSRM) for the characterization of doping profiles.

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Silicon Carbide and Related Materials 2016

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Periodical:

Materials Science Forum (Volume 897)

Pages:

295-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.295

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Online since:

May 2017

Authors:

Rudolf Elpelt*, Bernd Zippelius, Stefan Doering, Uwe Winkler

Keywords:

Implantation, Process Simulation, Spreading Resistance, SSRM, TCAD

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