Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation

Keitaro Kondo; N Kamata; Hiroyuki Yaguchi; Shuhei Yagi; Takeshi Fukuda; Zentaro Honda

doi:10.4028/www.scientific.net/MSF.897.315

Paper Titles

Characterization of B-Implanted 3C-SiC for Intermediate Band Solar Cells
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Detection of Crystallographic Defects in 3C-SiC by Micro-Raman and Micro-PL Analysis
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Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals
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Effect of 3C-SiC Irradiation with 8 MeV Protons
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Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
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Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO₂/SiC Interface Properties
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Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
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Properties of SiO₂/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
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Re-Investigation of SiC/SiO₂ Interface Passivation by Nitrogen Annealing
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Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation

Abstract:

Though the crystal growth technology of SiC is improving steadily, it is still crucial to reduce crystalline defects which act as carrier recombination (CR) centers and deteriorate device performance. We detected CR centers in a p-type 4H-SiC substrate by observing the intensity change of photoluminescence due to the addition of a below-gap excitation (BGE) light of 0.93[eV]. We noticed the temperature and the BGE density dependence of band edge (BE) emission in addition to donor acceptor pair (DAP) emission and discriminated the temperature effect from that of BGE. The BGE density dependence of the PL intensity quenching is different among the BE emission, B₀- and C₀-lines of the DAP, respectively. It gives us an important clue for understanding CR mechanisms inside the bandgap of SiC.