Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation

Sophie Guillemin; Romain Esteve; Christian Heidorn; Gerald Unegg; Gerald Reinwald; Marcella Hartl; Daniel Kueck

doi:10.4028/www.scientific.net/MSF.897.367

Paper Titles

Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
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Improved 4H-SiC N-MOSFET Interface Passivation by Combining N₂O Oxidation with Boron Diffusion
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Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi_1-xMg_xO_3-δ
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Study of Etching Processes for SiC Defect Analysis
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Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation
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4H-SiC Trench Structure Fabrication with Al₂O₃ Etching Mask
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Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
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Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers
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A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Investigation on Wet Etching 4H-SiC Damaged by Ion...

Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation

Abstract:

In this work investigation on wet etching of ion implanted 4H-SiC has been performed. Starting with the search for a suitable etching solution is followed by investigations on how to damage 4H-SiC in an efficient way involving different implantation species in various doses. With the help of Monte Carlo simulations a model for the experimental findings is proposed to derive the limitations for the wet etch capability.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

367-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.367

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Online since:

May 2017

Authors:

Sophie Guillemin, Romain Esteve, Christian Heidorn, Gerald Unegg, Gerald Reinwald, Marcella Hartl, Daniel Kueck*

Keywords:

4H-SiC, Damage, Ion Implantation, Vacancy, Wet Etching

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References

[1] B.J. Baliga and D. Alok, U.S. Patent 5, 436, 174. (1995).

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[2] Information on http: /www. srim. org.

Google Scholar

[3] T. Henkel, G. Ferro, S. Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, N. Kobayashi, Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching, Mater. Sci. Forum 338-342 (2000).

DOI: 10.4028/www.scientific.net/msf.338-342.481

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