Performance and Reliability Requirements for the Application of SiC Power MOSFET in Electrified Vehicle Drive Systems

Abstract:

Article Preview

In the past 20 years, SiC has gone through rapid development as a next-generation power semiconductor and the automotive market is considered one of its key potential application areas. Recently SiC power MOSFETs became commercially available from multiple manufacturers, attracting significant interest in the automotive industry for their benefits in the electric drivetrain system, including higher energy efficiency and opportunities of component weight and size reduction. Optimistic prediction of technology adoption in hybrid electric vehicles (HEV) also helped create a momentum for semiconductor suppliers to engage in the demonstration of SiC power modules for the traction inverter application. However, the performance expectations and reliability requirements of SiC-based power control units remain challenging for the cost-sensitive market. This paper will discuss the status and outlook of electrified powertrain systems, and outline the requirements for wide implementation of SiC power MOSFETs.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

887-890

Citation:

M. Su and C. C. Chen, "Performance and Reliability Requirements for the Application of SiC Power MOSFET in Electrified Vehicle Drive Systems", Materials Science Forum, Vol. 924, pp. 887-890, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] M. Su, C. Chen, K.P. Bhat, J. Kikuchi, S. Sharma, T. Lei, Opportunity and Challenges for SiC-Based HEV Traction Inverter Systems, SAE Technical Paper 2017-01-1248, 2017.

DOI: https://doi.org/10.4271/2017-01-1248

[2] Power America AMO Peer Review, Washington, DC, June 14, 2016, information available on https://energy.gov.

Fetching data from Crossref.
This may take some time to load.