Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs

Abstract:

Article Preview

In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

901-904

Citation:

A. Huerner et al., "Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs", Materials Science Forum, Vol. 924, pp. 901-904, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] T. Kimoto, J. Suda, Y. Yonezawa, K. Asano, K. Fukuda and H. Okumura, Progress in ultrahigh-voltage SiC devices for future power infrastructure,, 2014 IEEE International Electron Devices Meeting, San Francisco, CA, 2014, p.2.5.1-2.5.4.

DOI: https://doi.org/10.1109/iedm.2014.7046967

[2] G. Wang, X. Huang, J. Wang, T. Zhao, S. Bhattacharya and A. Q. Huang, Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application,, 2010 IEEE Energy Conversion Congress and Exposition, Atlanta, GA, 2010, pp.100-104.

DOI: https://doi.org/10.1109/ecce.2010.5618069

[3] S. Madhusoodhanan et al., Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications,, 2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, NC, 2012, pp.310-317.

DOI: https://doi.org/10.1109/ecce.2012.6342807

[4] V. Pala et al., Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes,, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, 2016, pp.227-230.

DOI: https://doi.org/10.1109/ispsd.2016.7520819

Fetching data from Crossref.
This may take some time to load.