Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs

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Abstract:

In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.

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901-904

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June 2018

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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