Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs
In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
A. Huerner et al., "Analytical Model for the Influence of the Gate-Voltage on the Forward Conduction Properties of the Body-Diode in SiC-MOSFETs", Materials Science Forum, Vol. 924, pp. 901-904, 2018