Short-Circuit Capability of SiC Cascode


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This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




X. Q. Li et al., "Short-Circuit Capability of SiC Cascode", Materials Science Forum, Vol. 924, pp. 871-874, 2018

Online since:

June 2018




* - Corresponding Author

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