Short-Circuit Capability of SiC Cascode

Abstract:

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This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

871-874

Citation:

X. Q. Li et al., "Short-Circuit Capability of SiC Cascode", Materials Science Forum, Vol. 924, pp. 871-874, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

[1] X. Li et al., PCIM Europe (2014) 448-455.

[2] S. G. Mller et al., Mater. Sci. Forum 264-268 (1998) 623-626.

[3] L. Hitova et al., J. Electrochem. Soc. 147 (2000) 3546-3547.

[4] Ronald Green et al., Mater. Sci. Forum, 897 (2017) 525-528.

[5] P.D. Reigosa et al., IEEE Trans. Ind. Appl. 53 (3) (2016) 2880-2887.

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