Short-Circuit Capability of SiC Cascode

Xue Qing Li; Anup Bhalla; Peter Alexandrov

doi:10.4028/www.scientific.net/MSF.924.871

Paper Titles

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application
p.854

Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power
p.858

SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack
p.862

The Development of High Thermal Conductivity SiC Power Modules through the Implementation of Advanced Cooling Techniques Coupled with High Heat Transfer Materials
p.866

Short-Circuit Capability of SiC Cascode
p.871

Benefits of High Voltage SiC Applications in Medium Voltage Power Distribution Grids
p.875

Design of SiC-Based DC-DC Converters for Future Offshore Wind Power Applications
p.879

Module and System Considerations to Maximize Performance Advantages of SiC Power Devices
p.883

Performance and Reliability Requirements for the Application of SiC Power MOSFET in Electrified Vehicle Drive Systems
p.887

HomeMaterials Science ForumMaterials Science Forum Vol. 924Short-Circuit Capability of SiC Cascode

Short-Circuit Capability of SiC Cascode

Abstract:

This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.