Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power

Taiga Goto; Noriyuki Iwamuro; Akira Tokuchi; Takashi Naito; Kenji Fukuda; Noriyuki Iwamuro

doi:10.4028/www.scientific.net/MSF.924.858

Paper Titles

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First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application
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Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power
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SiC JBS Diode Symmetrical Voltage Doubler Represented as the Diffusion-Welded Stack
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The Development of High Thermal Conductivity SiC Power Modules through the Implementation of Advanced Cooling Techniques Coupled with High Heat Transfer Materials
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Short-Circuit Capability of SiC Cascode
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Benefits of High Voltage SiC Applications in Medium Voltage Power Distribution Grids
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Experimental Demonstration on Ultra High Voltage...

Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power

Abstract:

This paper presents the experimental results of static and dynamic characteristics of the newly developed 14 kV 4H-SiC high-speed drift step recovery diode (DSRD) for pulse power applications for the first time. The feature of the diode structure is to be designed based upon the p+/p-/n+ structure and is to make an additional extremely low doping and thin n-drift layer between the p-drift layer and n+ substrate. This device successfully exhibits higher breakdown voltage of 14kV and high-speed voltage pulse in a range of a few nanoseconds, simultaneously.