Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power
This paper presents the experimental results of static and dynamic characteristics of the newly developed 14 kV 4H-SiC high-speed drift step recovery diode (DSRD) for pulse power applications for the first time. The feature of the diode structure is to be designed based upon the p+/p-/n+ structure and is to make an additional extremely low doping and thin n-drift layer between the p-drift layer and n+ substrate. This device successfully exhibits higher breakdown voltage of 14kV and high-speed voltage pulse in a range of a few nanoseconds, simultaneously.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
T. Goto et al., "Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power", Materials Science Forum, Vol. 924, pp. 858-861, 2018