Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power

Abstract:

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This paper presents the experimental results of static and dynamic characteristics of the newly developed 14 kV 4H-SiC high-speed drift step recovery diode (DSRD) for pulse power applications for the first time. The feature of the diode structure is to be designed based upon the p+/p-/n+ structure and is to make an additional extremely low doping and thin n-drift layer between the p-drift layer and n+ substrate. This device successfully exhibits higher breakdown voltage of 14kV and high-speed voltage pulse in a range of a few nanoseconds, simultaneously.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

858-861

Citation:

T. Goto et al., "Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power", Materials Science Forum, Vol. 924, pp. 858-861, 2018

Online since:

June 2018

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$38.00

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[1] A.V. Afanasyev et al., Materials Science Forum, Vols. 821-823, 2015, pp.632-635.

[2] V.A.llyin et al., Materials Science Forum, Vol. 858, 2016, pp.786-789.

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