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Effects of Sputtering Pressure on (ZnO)x(InN)1-x Crystal Film Growth at 450°C

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Abstract:

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

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THERMEC 2018 View Preview

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Periodical:

Materials Science Forum (Volume 941)

Pages:

2093-2098

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.941.2093

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Online since:

December 2018

Authors:

Naho Itagaki*, Kazuto Takeuchi, Nanoka Miyahara, Kouki Imoto, Hyun Woong Seo, Kazunori Koga, Masaharu Shiratani

Keywords:

InN, Sputter Epitaxy, Thin Film, X-Ray Diffraction, ZnO

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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