Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool

Yoshiaki Daigo; Akio Ishiguro; Shigeaki Ishii; Yoshikazu Moriyama; Kunihiko Suzuki; Masayoshi Yajima

doi:10.4028/www.scientific.net/MSF.963.101

Paper Titles

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method
p.80

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
p.85

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
p.91

Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N₂Flow Rate under High Growth Rate Condition
p.97

Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
p.101

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices
p.105

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
p.109

Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
p.114

Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119

HomeMaterials Science ForumMaterials Science Forum Vol. 963Repeatability of Epitaxial Growth of n-Type 4H-SiC...

Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool

Abstract:

N-type 4H-SiC homo-epitaxial films were grown by high speed wafer rotation vertical CVD tool, and both short term repeatability and long term repeatability of epitaxial growth were investigated. In the short term repeatability investigated by 6 epitaxial wafers chosen from successively grown 12 epitaxial wafers using same recipe, it was found that total variation of thickness and carrier concentration for all measurement points of 6 wafers is 1.44 and 4.64 % respectively, which indicates excellent repeatability as well as high uniform thickness and carrier concentration. In the long term repeatability investigated by a very large number of growth experiments, probability achieving target uniformity of thickness and carrier concentration of the SiC films was increased up to 1.32 times by optimizing gas nozzle structure in gas inlet compared with in the case of conventional gas nozzles. Moreover, adjustment range of C/Si ratio necessary to achieve target uniformity of thickness and carrier concentration of the films was considerably reduced to 22 % by optimized gas nozzles.