Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method

Kazuaki Seki; Kazuhiko Kusunoki; Shinsuke Harada; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.963.80

Paper Titles

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
p.64

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
p.71

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
p.75

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method
p.80

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
p.85

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
p.91

Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N₂Flow Rate under High Growth Rate Condition
p.97

Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
p.101

HomeMaterials Science ForumMaterials Science Forum Vol. 963Evaluation of Basal Plane Dislocation Behavior in...

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method

Abstract:

A 4H-SiC 4° off-wafer fabricated from a bulk crystal grown using the solution method has high quality with extremely low-density threading screw (TSD) and basal plane (BPD) dislocations. For application to electronic devices, we formed an epitaxial layer on the solution-method-prepared wafer via chemical vapor deposition and evaluated the BPD in the epitaxial layer using synchrotron X-ray topography and molten KOH etching. The BPD density of the epitaxial layer formed on the solution-grown crystals was extremely low. Bulk crystals fabricated as wafers by the solution method are expected to be applied to high-voltage bipolar devices that do not suffer from degradation of forward characteristics.