Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth

Kotaro Kawaguchi; Kazuaki Seki; Kazuhiko Kusunoki

doi:10.4028/www.scientific.net/MSF.963.75

Paper Titles

Research on the Key Problems in the Industrialization of SiC Substrate Materials
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Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
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Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
p.71

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
p.75

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method
p.80

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
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High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
p.91

Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N₂Flow Rate under High Growth Rate Condition
p.97

HomeMaterials Science ForumMaterials Science Forum Vol. 963Effect of Melt-Back Process on the Quality of...

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth

Abstract:

We investigated the effect of a melt-back process on the quality of the grown crystal in 4H-SiC solution growth. In our experiments, the crystal was grown by top-seeded solution growth (TSSG) method with and without melt-back, following which the quality of the obtained crystals was compared. When solution growth was carried out without melt-back, solvent inclusions and a different polytype were observed. When molten KOH etching was conducted, the dislocation density in the crystals at the early stage of growth became much higher than that in a seed crystal. Solvent inclusions, a different polytype, and an increase in dislocations were suppressed when solution growth was performed with melt-back. It was confirmed that melt-back is necessary to prevent the deterioration of crystal quality at the early stage of solution growth.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

75-79

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.75

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Online since:

July 2019

Authors:

Kotaro Kawaguchi*, Kazuaki Seki, Kazuhiko Kusunoki

Keywords:

4H-SiC, Melt-Back, Molten KOH Etching, Solution Growth, TEM Observation

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