Research on the Key Problems in the Industrialization of SiC Substrate Materials

Pao Gao; Jun Xin; Cheng Feng Yan; Hai Kuan Kong; Jian Jun Chen; Xue Chao Liu; Er Wei Shi

doi:10.4028/www.scientific.net/MSF.963.56

Paper Titles

Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth
p.38

Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules
p.42

New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
p.46

A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
p.51

Research on the Key Problems in the Industrialization of SiC Substrate Materials
p.56

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
p.64

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
p.71

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
p.75

HomeMaterials Science ForumMaterials Science Forum Vol. 963Research on the Key Problems in the...

Research on the Key Problems in the Industrialization of SiC Substrate Materials

Abstract:

The development of semiconductor materials and devices will lead to a new industrial technology revolution, in which the Silicon Carbide (SiC) substrate material has very excellent performance and it is especially suitable for manufacturing wave length lasers, white light emitting tubes, high-frequency, high-temperature and high-power devices, etc. This paper focuses on solving the key problems for producing large size and low defects of SiC crystals by the PVT method, such as the preparation and purification of the high purity raw material, the simulation of the temperature field, the control of the crystal defects and the growth of the large size SiC crystals.It is critical for the development of SiC industry.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

56-59

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.56

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Online since:

July 2019

Authors:

Pao Gao*, Jun Xin, Cheng Feng Yan, Hai Kuan Kong, Jian Jun Chen, Xue Chao Liu, Er Wei Shi

Keywords:

Crystal Growth, PVT Method, Semiconductor, Silicon Carbide

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References

[1] B.C. Joshi, C. Dhanavantri, D. Kumar, Sapphire, SiC, AlN, Si and diamond-substrate material for GaN HEMT and LED, J. Optoelectron. Adv. M., 11 (2009) 1111-1116.

Google Scholar

[2] M. Loboda, Design considerations for SiC-based power electronics, IET Power Electronics, 38 (2012) 6-8.

Google Scholar

[3] Y.M. Tairov, V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals, J. Cryst. Growth., 43 (1978) 209-212.

DOI: 10.1016/0022-0248(78)90169-0

Google Scholar

[4] S.G. Müller, R.C. Glass, H.M. Hobgood, et al., The status of SiC bulk growth from an industrial point of view, J. Cryst. Growth., 211 (2000) 325-332.

DOI: 10.1016/s0022-0248(99)00835-0

Google Scholar

[5] T. Kimoto, Bulk and epitaxial growth of silicon carbide, Prog. Cryst. Growth. CH., 62 (2016) 329-351.

Google Scholar

[6] J.G. Kim, E.J. Jung, Y. Kim, et al., Quality improvement of single crystal 4H SiC grown with a purified β-SiC powder source, Ceram. Int., 40 (2014) 3953-3959.

DOI: 10.1016/j.ceramint.2013.08.041

Google Scholar

[7] X. Liu, E.W. Shi, L.X. Song, Z.Z. Chen, Effects of graphitization of the crucible on silicon carbide crystal growth, J. Cryst. Growth., 310 (2008) 4314-4318.

DOI: 10.1016/j.jcrysgro.2008.07.072

Google Scholar

[8] K. Shenai, A. Christou, M. Dudley, et al., Crystal defects in wide bandgap semiconductors, ECS Transactions, 61 (2014) 283-293.

DOI: 10.1149/06104.0283ecst

Google Scholar

[9] M. Cooke, Seeking workable low-cost silicon carbide, Semic. Today., 2007, 2(9):54-57.

Google Scholar