A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials

Santhana Raghavan Parthasarathy; Roman Drachev; Bala Bathey; Henry Chou

doi:10.4028/www.scientific.net/MSF.963.51

Paper Titles

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34

Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth
p.38

Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules
p.42

New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
p.46

A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
p.51

Research on the Key Problems in the Industrialization of SiC Substrate Materials
p.56

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
p.64

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
p.71

HomeMaterials Science ForumMaterials Science Forum Vol. 963A Comparative Study of the Crystal Growth...

A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials

Abstract:

The growing demand for power electronic device for automotive, photovoltaic, transportation, motor drives creates an enormous demand for widebandgap semiconducting materials such as silicon carbide (SiC) and gallium nitride (GaN). While GaN based devices can be used for low voltages, SiC is the workhorse for voltages >600. Progress in the availability of larger diameter SiC wafers has driven the final cost of device assembly down. In this paper we compare different growth techniques for growing high quality SiC crystals, technology adaption and road to low cost SiC materials. GT Advanced Technologies has been involved in SiC sublimation equipment manufacturing since the year 2000 and the results from our 100 mm and 150 mm SiC crystals show high epi-quality.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

51-55

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.51

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Online since:

July 2019

Authors:

Santhana Raghavan Parthasarathy*, Roman Drachev, Bala Bathey, Henry Chou

Keywords:

150 mm, Basal Planar Dislocation, Physical Vapor Transport (PVT), Threading Screw Dislocation

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