Study on Dislocation Behaviors during PVT Growth of 4H-SiC

Im Gyu Yeo; Tai Hee Eun; Jang Yul Kim; Seung Seok Lee; Han Suk Seo; Myong Chuel Chun

doi:10.4028/www.scientific.net/MSF.963.64

Paper Titles

New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
p.46

A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
p.51

Research on the Key Problems in the Industrialization of SiC Substrate Materials
p.56

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
p.64

Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
p.71

Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth
p.75

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method
p.80

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
p.85

HomeMaterials Science ForumMaterials Science Forum Vol. 963Study on Dislocation Behaviors during PVT Growth...

Study on Dislocation Behaviors during PVT Growth of 4H-SiC

Abstract:

The generation and transformation of dislocations in 4H-SiC crystals grown by PVT were investigated. Experiments were carried out in two stages for more comprehensive observation on dislocation behaviors. For the first stage known as initial growth, we investigated mainly the seed and grown interface. The behavior and transition of the dislocations in grown crystal were observed along the length of the crystal at second stage. The formation of threading edge dislocations (TEDs) strongly depends on the surface morphologies related with internal temperature gradients during crystal growth. The basal plane dislocation (BPDs) and threading screw dislocation (TSDs) cause from the seed crystal and formed at the initial stage of growth were gradually decreased in number along the length of the crystal and under certain conditions such as distorted stresses, dislocations were converted into other types of dislocations.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2018

View Preview

Info:

Periodical:

Materials Science Forum (Volume 963)

Pages:

64-67

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.64

Citation:

Cite this paper

Online since:

July 2019

Authors:

Im Gyu Yeo*, Tai Hee Eun, Jang Yul Kim, Seung Seok Lee, Han Suk Seo, Myong Chuel Chun

Keywords:

4H-SiC, Dislocation, Initial Growth, Sublimation, X-Ray Topography

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Yu.M. Tairov, V.F. Tsvetkov, J. Crystal Growth 52, 146 (1981).

Google Scholar

[2] Yu.M. Tairov, V.F. Tsvetkov, J. Crystal Growth 43, 209 (1978).

Google Scholar

[3] E.Nmokhove, S.S Nagalyuk, Mater. Sci. Forum. 740 (2013) 60-64.

Google Scholar

[4] N. Ohtani, M. Katsuno, H. Tsuge, T. Fujimoto, M. Nakabayashi, H. Yashiro, M. Sawamura, T. Aigo, T. Hoshino, J. Crystal Growth 55, 286 (2006).

DOI: 10.1016/j.jcrysgro.2005.09.030

Google Scholar

[5] A. Gupta, P. Wu, V. Rengarajan, X.Xu, M. Yoganathan, C. Martin, E. Emorhokpor, A. souzis, I. Zwieback and T. Anderson, Mater. Res. SoC. Symp. Proc., 1246, (2010) B01-01.

DOI: 10.1557/proc-1246-b01-01

Google Scholar

[6] K. Tani, T. Fujimoto, K. Kamei, K. Kusunoki, K. Seki and T. Yano, Mater. Sci. Forum. 73-76, 858(2016).

Google Scholar

[7] X. Chen, F. Zhang, X. Yang, Y. Peng, X. Xie, T. Li, X. Hu, X. Xu, G. Li, R. Wang, Mater. Sci. Forum.19-23, 897(2017).

Google Scholar