New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method

Jeong Min Choi; Chae Young Lee; Dae Sung Kim; Mi Seon Park; Yeon Suk Jang; Won Jae Lee; Wei Fan; Hao Qu; Xiu Fang Chen; Xian Gang Xu

doi:10.4028/www.scientific.net/MSF.963.46

Paper Titles

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
p.30

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34

Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth
p.38

Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules
p.42

New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
p.46

A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
p.51

Research on the Key Problems in the Industrialization of SiC Substrate Materials
p.56

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
p.60

Study on Dislocation Behaviors during PVT Growth of 4H-SiC
p.64

HomeMaterials Science ForumMaterials Science Forum Vol. 963New Materials for Semi-Insulating SiC Single...

New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method

Abstract:

The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were systematically compared. 6H-SiC polytype was obtained on both crystals regardless of porous graphite plate. The quality of SiC crystal grown using porous graphite plate placed in the TaC-coated crucible was slightly better than SiC crystal without porous graphite plate. SiC crystals having an average resistivity value of about 1×10¹⁰ Ωcm were obtained. In the result of COREMA measurement, the use of porous graphite plate tends to obtain wafers with better uniformity in resistivity value.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

46-50

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.46

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Online since:

July 2019

Authors:

Jeong Min Choi, Chae Young Lee, Dae Sung Kim, Mi Seon Park, Yeon Suk Jang, Won Jae Lee*, Wei Fan, Hao Qu, Xiu Fang Chen, Xian Gang Xu

Keywords:

Crystal Quality, Physical Vapor Transport (PVT), Porous Graphite, Semi-Insulating Crystal Growth

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