Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method

Chae Young Lee; Jeong Min Choi; Dae Sung Kim; Mi Seon Park; Yeon Suk Jang; Won Jae Lee; In Seok Yang; Tae Hee Kim; Xiu Fang Chen; Xian Gang Xu

doi:10.4028/www.scientific.net/MSF.963.30

Paper Titles

Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup
p.14

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
p.18

Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
p.22

Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
p.26

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
p.30

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34

Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth
p.38

Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules
p.42

New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
p.46

HomeMaterials Science ForumMaterials Science Forum Vol. 963Variation of Vanadium Incorporation in...

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method

Abstract:

Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×10¹⁰ Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

30-33

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.30

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Online since:

July 2019

Authors:

Chae Young Lee*, Jeong Min Choi, Dae Sung Kim, Mi Seon Park, Yeon Suk Jang, Won Jae Lee, In Seok Yang, Tae Hee Kim, Xiu Fang Chen, Xian Gang Xu

Keywords:

Crystal Quality, Semi-Insulating Crystal, Vanadium Incorporation

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