Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Jung Woo Choi; Jung Gyu Kim; Byung Kyu Jang; Sang Ki Ko; Myung Ok Kyun; Jung Doo Seo; Kap Ryeol Ku; Jeong Min Choi; Won Jae Lee

doi:10.4028/www.scientific.net/MSF.963.18

Paper Titles

Preface

Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
p.5

Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules
p.10

Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup
p.14

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
p.18

Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
p.22

Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
p.26

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
p.30

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34

HomeMaterials Science ForumMaterials Science Forum Vol. 963Modified Hot-Zone Design for Large Diameter 4H-SiC...

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Abstract:

6-inch 4H-SiC single crystal was grown with modified hot-zone design for large diameter crystal. The simulation data confirmed reduced temperature gradient between center and edge region of growing front, and actual growth experiment exhibited that SiC crystal with good quality was obtained with modified hot-zone design without any quality degradation in edge region of bulk crystal. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals from middle and top region of grown ingot was observed to be almost identical. Furthermore, various properties of SiC crystal grown with modified hot-zone design have been systematically investigated.