Preface
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
p.5
p.5
Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules
p.10
p.10
Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup
p.14
p.14
Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
p.18
p.18
Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
p.22
p.22
Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
p.26
p.26
Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
p.30
p.30
Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34
p.34
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 963)
Online since:
July 2019
Сopyright:
© 2019 Trans Tech Publications Ltd. All Rights Reserved
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