Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules

Marko Swoboda; Ralf Rieske; Christian Beyer; Albrecht Ullrich; Gino Gesell; Jan Richter

doi:10.4028/www.scientific.net/MSF.963.10

Paper Titles

Preface

Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
p.5

Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules
p.10

Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup
p.14

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
p.18

Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
p.22

Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
p.26

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
p.30

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34

HomeMaterials Science ForumMaterials Science Forum Vol. 963Cold Split Kerf-Free Wafering Results for Doped...

Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules

Abstract:

We report on the results of intense third party evaluation of the COLD SPLIT technology. In total nine different SiC manufactures supplied test material. The results confirm the tremendous potential of the technology with total kerf losses per wafer of less than 100μm. Furthermore, our general approach led to comparable results for all vendors. The vendor specific difference like lateral doping level were addressed via control loops in our lasering process. These loops take crystal properties into account and adjust the applied laser energy and the depth of the laser process accordingly. Even the current best case results of sub 80μm split loss per wafer are dominated by systematic effects, which are addressed by continuous improvement efforts.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

10-13

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.10

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Online since:

July 2019

Authors:

Marko Swoboda, Ralf Rieske, Christian Beyer, Albrecht Ullrich, Gino Gesell, Jan Richter*

Keywords:

Cracks, Crystal, Crystalline Materials, Kerf-Free Wafering Techniques, Laser Materials Processing, Rough Surfaces, Silicon Carbide, Stress, Substrate, Surface Treatment, Wide Band Gap Semiconductors

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* - Corresponding Author

References

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DOI: 10.4028/www.scientific.net/msf.897.403

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