Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup

Matthias Arzig; Michael Salamon; Norman Uhlmann; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.963.14

Paper Titles

Preface

Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
p.5

Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules
p.10

Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup
p.14

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
p.18

Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
p.22

Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
p.26

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
p.30

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
p.34

HomeMaterials Science ForumMaterials Science Forum Vol. 963Tracking of the Growth Interface during PVT-Growth...

Tracking of the Growth Interface during PVT-Growth of SiC Boules Using a X-Ray Computed Tomography Setup

Abstract:

A crystal comprising various polytype switches was analyzed in detail. A very flat temperature profile together with an on axis seed are used to increase the probability for the nucleation of foreign polytypes during growth. Formation of foreign polytype occurred from thin lamella propagating from the edge of the main facet to the crystal rim as well as from 2D nucleation. The evolution of the crystal surface during the growth time is visualized using in-situ X-Ray computed tomography. Two concurrent growth centers are identified in the beginning of the growth process. Nucleation and lateral growth of foreign polytypes in the main facet area can be traced during the growth process.