Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible

Daiki Tanaka; Hiroaki Kurokawa; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

doi:10.4028/www.scientific.net/MSF.963.34

Paper Titles

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth
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Impacts of TaC Coating on SiC PVT Process Control and Crystal Quality
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Major Carrier Element Concentrations in SiC Powder and Bulk Crystal
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Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method
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Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible
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Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth
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Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules
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New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method
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A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Study on N and B Doping by Closed Sublimation...

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible

Abstract:

Boron (B) doping sources and crucible materials for stable, reproducible and high concentration B doping in fluorescent SiC (f-SiC) were investigated. When a Ta crucible was used with BN powder as a B doping source were used, B doping did not occur owing to too low C/Si ratio. On the other hand, when a C crucible and suitable Ta components inside the crucible were used, a high B concentration of 1.58 × 10¹⁹ cm^-3 was obtained, owing to the high C/Si ratio. The results indicate that a C crucible with optimal Ta components and BN powder are suitable for high concentration B doping.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

34-37

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.34

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Online since:

July 2019

Authors:

Daiki Tanaka*, Hiroaki Kurokawa, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

Keywords:

B Doping, C/Si Ratio, Closed Sublimation Growth, Fluorescent SiC, Surface Morphology

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References

[1] V. Grivickas, K. Gulbinas, V. Jokubavičius, J. W. Sun, M. Karaliūnas, S. Kamiyama, M. Linnarsson, M. Kaiser, .P Wellmann, and M. Syväjärvi, IOP Conf. Series, Matr. Sci. Eng. 56, 012004 (2014).

DOI: 10.1088/1757-899x/56/1/012004

Google Scholar

[2] W. Lu, Y. Ou, E. M. Fiordaliso, Y. Iwasa, V. Jokubavicius, M. Syvajarvi, S. Kamiyama, P. M. Petersen, and H. Ou, Sci. Rep. 7, 9798. (2017).

DOI: 10.1038/s41598-017-10771-7

Google Scholar

[3] A. Caleckas, J. Linnros, V. Grivickas, U. Lindefelt, And C. Hallin, Appl. Phys. Letters 71, 3269-3271 (1997).

DOI: 10.1063/1.120309

Google Scholar

[4] Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syvajarvi, and H. Ou, Opt. Mater. Express 1, 1439-1446 (2011).

DOI: 10.1364/ome.1.001439

Google Scholar

[5] S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, and I. Akasaki, J. Appl. Phys. 99, 093108 (2006).

Google Scholar

[6] T. Furusho, S. K. Lilov, S. Ohshima, and S. Nishino, J. Appl. Phys. 40, 6737-6740 (2001).

Google Scholar

[7] S.Nishino, K. Matsumoto, T. Yoshida, Y. Chen, S. K. Lilov, Mater Sci and Engineering 61-62 121-124 (1999).

Google Scholar

[8] M. Syvajarvi, R. Yakimova, R. R. Ciechonski, and E. Janzen, Diamond Relat. Mater. 12, 1936-1939 (2003).

Google Scholar