Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules

Johannes Steiner; Matthias Arzig; Ta Ching Hsiao; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.963.42

Paper Titles

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Optimization of the SiC Powder Source Size...

Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules

Abstract:

The influence of four different SiC source powder size distributions on the sublimation behavior during physical vapor transport growth of SiC was studied. The growth processes were carried out in a 3 inch crystal growth setup and observed in situ using advanced 3D computed tomography X-ray visualization. The single modal D90 size distribution of two source powders was 50 μm and 200 μm, respectively, with a corresponding average powder density of 1.17 g/cm3. The third source powder consisted of a blend of the previously named powders and exhibited an average powder density of 1.66 g/cm3 with a bimodal particle size distribution. The last source was composed of a solid polycrystalline SiC cylinder. The bimodal powder source exhibited a smoother morphology change and material consumption during the growth run and led to a much more stable shape change of the growth interface compared to the single modal source powders. The solid source featured the least morphology change. Therefore, with a careful adaption of the source material stable growth conditions can be achieved.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

42-45

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.42

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Online since:

July 2019

Authors:

Johannes Steiner*, Matthias Arzig, Ta Ching Hsiao, Peter J. Wellmann

Keywords:

Computed Tomography, In Situ Visualization, Physical Vapor Transport (PVT), Silicon Carbide, Source Material

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References

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