Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices

Keiji Wada; Takaya Miyase; Hironori Itoh; Tsutomu Hori; Hideyuki Doi; Masaki Furumai

doi:10.4028/www.scientific.net/MSF.963.105

Paper Titles

Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent
p.85

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
p.91

Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N₂Flow Rate under High Growth Rate Condition
p.97

Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
p.101

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices
p.105

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
p.109

Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
p.114

Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123

HomeMaterials Science ForumMaterials Science Forum Vol. 963Extensive 99% Killer Defect Free 4H-SiC Epitaxial...

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices

Abstract:

Epitaxial growth of 4H-SiC on 150 mm wafers using 3 x 150 mm multi-wafer CVD has been investigated to realize extremely low defect density on the epitaxial layer in order to achieve stable fabrication of high current devices with large die size. By optimizing the epitaxial growth conditions as well as the improved procedures for the inside the furnace to remain cleaned stably for cumulative growth processes, we have demonstrated an extensive 99% defect free epitaxial inlayer in a 5 mm x 5 mm block evaluation which is having excellent doping and thickness uniformity simultaneously.