New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

Tobias Höchbauer; Christian Heidorn; Nikolaos Tsavdaris

doi:10.4028/www.scientific.net/MSF.963.123

Paper Titles

Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices
p.105

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
p.109

Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
p.114

Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
p.127

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141

HomeMaterials Science ForumMaterials Science Forum Vol. 963New SiC Epitaxial Growth Process with up to 100%...

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

Abstract:

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.