Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
p.114
p.114
Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119
p.119
New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123
p.123
Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
p.127
p.127
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131
p.131
Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136
p.136
High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141
p.141
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149
p.149
Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
p.153
p.153
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
Abstract:
By inspecting the CVD growth parameters, such as the flow rates of HCl and H2 carrier gases, the pressure and the C/Si ratio, the trench filling in a high-rate mode with a high growth rate on the bottom and a relatively low growth rate on the mesa top was carried out. 4H-SiC trenches with the depths of 48 and 55 μm have been completely filled at the rates of 6.2 and 5.5 μm/h, respectively.
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Periodical:
Materials Science Forum (Volume 963)
Pages:
131-135
Citation:
Online since:
July 2019
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© 2019 Trans Tech Publications Ltd. All Rights Reserved
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