Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon

Marcin Zielinski; Sylvain Monnoye; Hugues Mank; Frank Torregrosa; Gregory Grosset; Yohann Spiegel

doi:10.4028/www.scientific.net/MSF.963.153

Paper Titles

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
p.153

Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
p.157

Structural Strain in Single Layer Graphene Fabricated on SiC
p.161

Evaluation of the Impact of Al Atoms on SiO₂/ SiC Interface Property by Using 4H-SiC n⁺-Channel Junctionless MOSFET
p.171

Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs
p.175

HomeMaterials Science ForumMaterials Science Forum Vol. 963Novel Carbon Treatment to Create an Oriented...

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon

Abstract:

In this contribution we investigate the possibility to obtain an oriented 3C-SiC seed on Si substrate “pre-carbonized” through Plasma Immersion Ion Implantation (PIII) process by combining PIII with high temperature annealing.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

153-156

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.153

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Online since:

July 2019

Authors:

Marcin Zielinski*, Sylvain Monnoye, Hugues Mank, Frank Torregrosa, Gregory Grosset, Yohann Spiegel

Keywords:

3C-SiC, Carbonization, PIII, Plasma Immersion Ion Implantation

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