Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base

Michael Schöler; Philipp Schuh; Johannes Steiner; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.963.157

Paper Titles

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
p.153

Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
p.157

Structural Strain in Single Layer Graphene Fabricated on SiC
p.161

Evaluation of the Impact of Al Atoms on SiO₂/ SiC Interface Property by Using 4H-SiC n⁺-Channel Junctionless MOSFET
p.171

Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs
p.175

Surface Morphology of 4H-SiC after Thermal Oxidation
p.180

HomeMaterials Science ForumMaterials Science Forum Vol. 963Modeling of the PVT Growth Process of Bulk 3C-SiC...

Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base

Abstract:

We report on the modeling of the temperature field and supersaturation in front of the SiC crystal growth interface of a physical vapor transport growth configuration. The data are compared with experimental results, like the growth of free standing 3C-SiC wafers with a diameter of 50 mm and a thickness of 870 µm. Special emphases is put on the precise handling of the materials properties which include the temperature dependency of the heat and electrical conductivity of the graphite parts at temperatures above 2000 °C.