Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET

Hironori Takeda; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.963.171

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Evaluation of the Impact of Al Atoms on SiO2/ SiC...

Evaluation of the Impact of Al Atoms on SiO₂/ SiC Interface Property by Using 4H-SiC n⁺-Channel Junctionless MOSFET

Abstract:

To investigate the impact of Al atoms on channel mobility at SiO₂/SiC interface, we fabricated the junctionless metal-oxide-semiconductor field-effect transistors (MOSFETs), in which thin n⁺-SiC epitaxial layers with and without Al⁺ ion implantation were used as a channel, and compared their electrical characteristics. The effective mobility (m_eff) of n⁺-channel junctionless MOSFET without Al doping was estimated to be 14.9 cm²/Vs, which is higher than inversion-mode MOSFET fabricated with the same gate oxidation condition (3.1 cm²/Vs). The m_eff values of the MOSFETs with low Al doping concentration (5´10¹⁷ and 1´10¹⁸ cm^-3) were almost the same as that of Al-free MOSFET, and the device with the highest Al doping (5´10¹⁸ cm^-3) exhibited slight mobility degradation of about 15% compared to the other devices. Hall mobility in thick n⁺ layer with the highest Al doping was also slightly degraded, suggesting that Al atoms in the channel are not the major cause of degraded SiO₂/SiC interface property.

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Materials Science Forum (Volume 963)

Pages:

171-174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.171

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Online since:

July 2019

Authors:

Hironori Takeda*, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe

Keywords:

4H-SiC, Al Atoms, Effective Mobility, Junctionless MOSFET, SiO₂/SiC Interface Property

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