Structural Strain in Single Layer Graphene Fabricated on SiC

Wan Cheng Yu; Xiu Fang Chen; Xiao Bo Hu; Xian Gang Xu; Peng Jin; Peng Yu; Rui Qi Wang

doi:10.4028/www.scientific.net/MSF.963.161

Paper Titles

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
p.153

Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
p.157

Structural Strain in Single Layer Graphene Fabricated on SiC
p.161

Evaluation of the Impact of Al Atoms on SiO₂/ SiC Interface Property by Using 4H-SiC n⁺-Channel Junctionless MOSFET
p.171

Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs
p.175

Surface Morphology of 4H-SiC after Thermal Oxidation
p.180

Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs
p.184

HomeMaterials Science ForumMaterials Science Forum Vol. 963Structural Strain in Single Layer Graphene...

Structural Strain in Single Layer Graphene Fabricated on SiC

Abstract:

Single layer graphene is fabricated on the Si face of silicon carbide through thermal decomposition. The thickness of graphene was checked by a combination of ex situ Kelvin probe force microscopy together with Raman spectroscopy and atomic force microscopy. The amount of residual strain induced is calculated to between 1.3% and 0.7%. Results also show that the magnitude of strain increased with growth time while the uniformity of strain improved.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

161-165

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.161

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Online since:

July 2019

Authors:

Wan Cheng Yu, Xiu Fang Chen*, Xiao Bo Hu, Xian Gang Xu, Peng Jin, Peng Yu, Rui Qi Wang

Keywords:

Graphene, KPFM, SiC, Strain

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* - Corresponding Author

References

[1] K. V. Emtsev, A. Bostwick, K. Horn, et al. Towards Wafer-size Graphene Layers by Atmospheric Pressure Graphitization of Silicon Carbide, Nat. Mater. 8.3 (2009) 203-207.

DOI: 10.1038/nmat2382

Google Scholar

[2] I. Forbeaux, J. M. Themlin, A. Charrier, et al. Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces, Appl. Surf. Sci. 162 (2000) 406-412.

DOI: 10.1016/s0169-4332(00)00224-5

Google Scholar

[3] C. Dimitrakopoulos, Y. M. Lin, A. Grill, et al. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors, J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. 28.5 (2010) 985-992.

DOI: 10.1116/1.3480961

Google Scholar

[4] N. Ferralis, R. Maboudian, C. Carraro. Evidence of structural strain in epitaxial graphene layers on 6H-SiC (0001), Phys. Rev. Lett. 101.15 (2008) 156801.

DOI: 10.1103/physrevlett.101.156801

Google Scholar

[5] X. Hu, X. Xu, X. Li, et al. Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method, J. Cryst. Growth 292.2 (2006) 192-196.

DOI: 10.1016/j.jcrysgro.2006.04.005

Google Scholar

[6] F. Fromm, Jr MHO, A. Molinasánchez, et al. Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001), New J. Phys. 15.16 (2014) 043031.

DOI: 10.1088/1367-2630/15/4/043031

Google Scholar

[7] J. S. Park, A. Reina, R. Saito, et al. Band Raman spectra of single, double and triple layer graphene. Carbon 47.5 (2009) 1303-1310.

Google Scholar

[8] A. Das, S. Pisana, B. Chakraborty, et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor, Nat. Nanotechnol. 3.4 (2008) 210-215.

DOI: 10.1038/nnano.2008.67

Google Scholar