High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film

Keisuke Kurashima; Kohei Shioda; Hitoshi Habuka; Hideki Ito; Shinichi Mitani; Yoshinao Takahashi

doi:10.4028/www.scientific.net/MSF.963.141

Paper Titles

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
p.127

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149

Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
p.153

Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
p.157

Structural Strain in Single Layer Graphene Fabricated on SiC
p.161

HomeMaterials Science ForumMaterials Science Forum Vol. 963High Temperature SiC Reactor Cleaning Using...

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film

Abstract:

A reactor cleaning technique for the silicon carbide (SiC) chemical vapor deposition (CVD) method has been developed using chlorine trifluoride (ClF₃) gas. The purified pyrolytic carbon film was studied as the improved coating film of the susceptor. At the temperatures up to 570 °C, the purified pyrolytic carbon film could have no serious damage after the exposure to the ClF₃ gas, to enable the high temperature and high speed cleaning.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

141-145

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.141

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Online since:

July 2019

Authors:

Keisuke Kurashima, Kohei Shioda, Hitoshi Habuka*, Hideki Ito, Shinichi Mitani, Yoshinao Takahashi

Keywords:

Chemical Vapor Deposition (CVD), Chlorine Trifluoride Gas, Pyrolytic Carbon, Reactor Cleaning

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