Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

Joerg Pezoldt; Charbel Zgheib; Thomas Stauden; Gernot Ecke; Thomas Kups; Heiko O. Jacobs; Petia Weih

doi:10.4028/www.scientific.net/MSF.963.127

Paper Titles

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
p.109

Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
p.114

Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
p.119

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
p.123

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
p.127

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
p.131

Effect of HCL on Surface Free Energy of SiC during CVD Trench Filling
p.136

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film
p.141

Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
p.149

HomeMaterials Science ForumMaterials Science Forum Vol. 963Germanium Incorporation in Silicon Carbide...

Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates

Abstract:

Ternary (Si_1-xC_y)Ge_x+y solid solutions were grown on Si-face 4H-SiC applying atomic layer molecular beam epitaxy at low temperatures. The grown layers consist of twinned 3C-SiC revealed by cross section electron microscopy. The germanium was incorporated on silicon lattice sites as revealed by atomic location by channeling enhanced microanalysis transmission electron microscopy studies. The Ge concentration of the grown 3C-(Si_1-xC_y)Ge_x+y heteroepitaxial layers decreases with increasing growth temperatures, but exceeds the solid solubility limit.

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Materials Science Forum (Volume 963)

Pages:

127-130

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.127

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Online since:

July 2019

Authors:

Joerg Pezoldt*, Charbel Zgheib, Thomas Stauden, Gernot Ecke, Thomas Kups, Heiko O. Jacobs, Petia Weih

Keywords:

AES, Cubic Silicon Carbide, Doping, Heteroepitaxy, Molecular Beam Epitaxy, SiGeC, Solid Solubility, Transmission Electron Microscopy (TEM)

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