Atomic Coordination Analysis of Nitrogen Introduced in SiO2/ SiC Interface and SiO2 Layer by XAFS Measurement

Masahiro Kunisu; Shingo Ogawa; Junichiro Sameshima; Masanobu Yoshikawa

doi:10.4028/www.scientific.net/MSF.963.222

Paper Titles

Theory of Carbon-Vacancy Diffusion at the SiO₂/4H-SiC Interface
p.204

DFT Calculation for Oxidation Reaction of SiC(0001)
p.208

Characterization of SiO₂/SiC Near-Interface Oxide Traps with Constant-Capacitance Deep-Level Transient Spectroscopy
p.213

Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS
p.217

Atomic Coordination Analysis of Nitrogen Introduced in SiO₂/ SiC Interface and SiO₂ Layer by XAFS Measurement
p.222

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures
p.226

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements
p.230

A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
p.236

Identification of Near-Interface Trap Distribution by Parameter Estimation
p.240

HomeMaterials Science ForumMaterials Science Forum Vol. 963Atomic Coordination Analysis of Nitrogen...

Atomic Coordination Analysis of Nitrogen Introduced in SiO₂/ SiC Interface and SiO₂ Layer by XAFS Measurement

Abstract:

Although the nitridation by N₂O or NO oxidation with annealing has been used in order to reduce interface trap density, the atomic location or coordination environment of nitrogen atom have been still unclear. In this study, we have investigated atomic coordination environment of nitrogen atom in both SiO₂/SiC interface and SiO₂ layer after nitridation by N₂O annealing using XAFS measurements and ab initio multiple scattering calculations. Nitrogen in SiO₂ layer was suggested to have the same atomic coordination environments as general SiON thin film. On the other hand, in SiO₂/SiC region, nitrogen atoms were isolated and occupied the C-site of SiC structure, and it was confirmed that nitrogen atoms were surrounded by silicon atoms and strong Si-N bonds were formed in the interface region that was not eliminated by HF etching.