Identification of Near-Interface Trap Distribution by Parameter Estimation

Yusuke Yamashita

doi:10.4028/www.scientific.net/MSF.963.240

Paper Titles

Atomic Coordination Analysis of Nitrogen Introduced in SiO₂/ SiC Interface and SiO₂ Layer by XAFS Measurement
p.222

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures
p.226

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements
p.230

A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
p.236

Identification of Near-Interface Trap Distribution by Parameter Estimation
p.240

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
p.244

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
p.251

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

HomeMaterials Science ForumMaterials Science Forum Vol. 963Identification of Near-Interface Trap Distribution...

Identification of Near-Interface Trap Distribution by Parameter Estimation

Abstract:

To identify the near-interface trap (NIT) distribution of a metal oxide semiconductor (MOS) capacitor, we propose a new evaluation method by parameter estimation through optimization. The MOS capacitor was fabricated with Al/SiO₂ (75 nm)/SiC and measured by the capacitance transient (C-t) method. In addition, C-t signals were calculated from the assumed NIT distribution model. Then, the calculated C-t signals were modified to fit the measured signals by optimization of the parameters of the NIT model. The two types of NITs, deep (E_c – E_t = 0.57 eV) and shallow (E_c – E_t = -0.02 eV or-0.18 eV), were revealed by this method.