Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices

Ling Guo; Koji Kamei; Kenji Momose; Hiroshi Osawa

doi:10.4028/www.scientific.net/MSF.963.244

Paper Titles

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures
p.226

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements
p.230

A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
p.236

Identification of Near-Interface Trap Distribution by Parameter Estimation
p.240

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
p.244

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
p.251

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

HomeMaterials Science ForumMaterials Science Forum Vol. 963Impact of Pit Defects on the Initial Electrical...

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices

Abstract:

In this paper, the effects of various defects on the initial electrical characteristics of planar-MOSFET devices were investigated. The measurement results revealed that some pit defects that resulted from the fabrication process were as harmful as traditional killer defects in Schottky barrier diode devices. These pit defects could be observed and distinguished by photoluminescence imaging technology. It is necessary to inspect wafers during fabrication—especially before the film deposition process, when the pit defects are easily overlaid and hidden.