Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy

Akira Kano; Akihiro Goryu; Mitsuaki Kato; Chiharu Ota; Aoi Okada; Johji Nishio; Kenji Hirohata

doi:10.4028/www.scientific.net/MSF.963.263

Paper Titles

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
p.244

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
p.251

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
p.280

HomeMaterials Science ForumMaterials Science Forum Vol. 963Dynamics Analysis of Single Shockley Stacking...

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy

Abstract:

Expansion of single Shockley stacking faults (SSFs) during forward current operation is an important issue, because it decreases the reliability of 4H-SiC bipolar devices. In this paper, we propose a method for analyzing SSF dynamics based on free energy under current conduction, temperature, and resolved shear stress conditions. The driving force for dislocation dissociation reactions and formation of SSFs is incorporated into the free energy function, including chemical potential, stacking fault energy, crystallographic energy, gradient energy and elastic strain energy. The net energy gain of the chemical potential was calculated as a function of temperature and current conduction through use of the a TCAD device simulator based on the Boltzmann equation, Poisson equation and the current continuity equation concerning electron and hole distributions with self-consistency. It was confirmed that SSF dynamics can be simulated by the proposed method. It was also found that SSF formation can be attributed to quantum well variation in which electrons in n-type 4H–SiC enter SSF-induced quantum well states to lower the energy of the dislocation system.