Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

Aoi Okada; Chiharu Ota; Johji Nishio; Akihiro Goryu; Ryosuke Iijima; Koji Nakayama; Tomohisa Kato; Yoshiyuki Yonezawa; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.963.280

Paper Titles

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
p.280

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
p.284

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
p.288

Deep Electronic Levels in n-Type and p-Type 3C-SiC
p.297

Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC
p.301

HomeMaterials Science ForumMaterials Science Forum Vol. 963Initiation of Shockley Stacking Fault Expansion in...

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

Abstract:

To understand the effects of temperature and injection current density on expansion of Shockley stacking faults (SSFs) from basal-plane dislocations in 4H-SiC p-i-n diodes, the threshold current density for SSF expansion was investigated at eight temperatures by electroluminescence image observation. The threshold injection current density was found to decrease at lower temperatures and to increase at higher temperatures. We identified the origin of this temperature dependence and found that the limiting factor for expansion differed depending on the temperature.

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Silicon Carbide and Related Materials 2018

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Materials Science Forum (Volume 963)

Pages:

280-283

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.280

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Online since:

July 2019

Authors:

Aoi Okada*, Chiharu Ota, Johji Nishio, Akihiro Goryu, Ryosuke Iijima, Koji Nakayama, Tomohisa Kato, Yoshiyuki Yonezawa, Hajime Okumura

Keywords:

4H-SiC, Current Density, P-i-N Diode, Stacking Fault, Temperature

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