Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability

Hrishikesh Das; Swapna Sunkari; Joshua Justice; Helen Pham; Kyeong Seok Park

doi:10.4028/www.scientific.net/MSF.963.284

Paper Titles

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
p.280

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
p.284

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
p.288

Deep Electronic Levels in n-Type and p-Type 3C-SiC
p.297

Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC
p.301

Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers
p.305

HomeMaterials Science ForumMaterials Science Forum Vol. 963Effect of Defects in Silicon Carbide Epitaxial...

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability

Abstract:

Inline metrology tools are widely used to detect defects in SiC epitaxial layers. The defect statistics are used in a variety of ways to determine quality, pass/fail and screen affected die. In this work, we document the automated detection and classification of various epitaxial defects based on type and origin. We further classify these categories into killer and non-killer defects and compare them to the electrical yield of Schottky Diodes. The origins of these defects are determined in broad categories, resulting in a clustering and yield-scaling model, which agrees very closely to experimental data. Further, we look at on-wafer screening techniques of potential weak die by both defect tagging and unclamped inductive switching (UIS) stress testing. Successful 1000-hr reliability tests show the robustness of our detection and screening methods.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

284-287

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.284

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Online since:

July 2019

Authors:

Hrishikesh Das*, Swapna Sunkari, Joshua Justice, Helen Pham, Kyeong Seok Park

Keywords:

Classification, Defects, Epitaxy, Reliability, Unclamped Inductive Switching (UIS), Yield

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