Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

Ruggero Anzalone; Nicolo Piluso; Andrea Severino; Simona Lorenti; Giuseppe Arena; Salvo Coffa

doi:10.4028/www.scientific.net/MSF.963.276

Paper Titles

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
p.280

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
p.284

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
p.288

Deep Electronic Levels in n-Type and p-Type 3C-SiC
p.297

HomeMaterials Science ForumMaterials Science Forum Vol. 963Dislocations Propagation Study Trough...

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping

Abstract:

In this work a deep investigation of the dislocation on 4H-SiC substrate has been shown. The dislocation intersecting the surface were enhanced by KOH etching at 500 deg. C. performed on whole 6 inches substrate. A comparison between basal plane dislocations and threading screw dislocations in the substrate with the defects in the epitaxial layer (mainly stacking faults and carrots) was performed. The comparison between shows a correlation between basal plane dislocations density and stacking faults density maps.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

276-279

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.276

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Online since:

July 2019

Authors:

Ruggero Anzalone*, Nicolo Piluso, Andrea Severino, Simona Lorenti, Giuseppe Arena, Salvo Coffa

Keywords:

4H-SiC, Dislocation, Substrate

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