Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers

Yoshitaka Nishihara; Koji Kamei; Kenji Momose; Hiroshi Osawa

doi:10.4028/www.scientific.net/MSF.963.272

Paper Titles

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
p.280

Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
p.284

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode
p.288

HomeMaterials Science ForumMaterials Science Forum Vol. 963Detecting Basal Plane Dislocations Converted in...

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers

Abstract:

Suppression of the forward voltage degradation is essential in fabricating bipolar devices on silicon carbide. Using a highly N–doped 4H–epilayer as an enhancing minority carrier recombination layer is a powerful tool for reducing the expansion of BPDs converted at the epi/sub interface; however, these BPDs cannot be observed by using the near–infrared photoluminescence in the layer. Near–ultraviolet photoluminescence was instead used to detect BPDs as dark lines. In addition, a short BPD converted near the epi/sub interface and contributing to the degradation was detected. When this evaluation was applied to the fabrication of a pin diode including a highly N–doped 4H–epilayer, the V_f shift was suppressed in comparison with that in a diode without the layer.

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Materials Science Forum (Volume 963)

Pages:

272-275

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.272

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Online since:

July 2019

Authors:

Yoshitaka Nishihara*, Koji Kamei, Kenji Momose, Hiroshi Osawa

Keywords:

Basal Plane Dislocation, Forward Voltage Degradation, Highly N–Doped 4H–Epilayer, Photoluminescence

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