Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope

Isaho Kamata; Kentaro Ohira; Kenji Kobayashi; Masaki Hasegawa; Mitsuyasu Miyata; Naoto Noguchi; Shinichiro Takami; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.963.255

Paper Titles

A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
p.236

Identification of Near-Interface Trap Distribution by Parameter Estimation
p.240

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
p.244

Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
p.251

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255

Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272

HomeMaterials Science ForumMaterials Science Forum Vol. 963Monitoring of Substrate and Epilayer Surfaces by...

Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope

Abstract:

4H-SiC surfaces before and after epitaxial growth (substrate and epitaxial layer surfaces) were investigated by mirror projection electron microscopy (MPJ) and atomic force microscopy (AFM). On the epitaxial layer surface, two types of short-step-bunchings (SSBs) were observed, one of which featured double grooves and protrusion perpendicular to the step-flow direction and the other, a single groove and protrusion. We also investigated the substrate surface and detected features of sub-surface damage and dislocations. These surfaces were compared and the relationship between the SSBs on the epitaxial layer surface and sub-surface damages and dislocations on the substrate surface were discussed.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.255

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Online since:

July 2019

Authors:

Isaho Kamata*, Kentaro Ohira, Kenji Kobayashi, Masaki Hasegawa, Mitsuyasu Miyata, Naoto Noguchi, Shinichiro Takami, Hidekazu Tsuchida

Keywords:

Mirror Projection Electron Microscope, Short Step Bunching, Sub-Surface Damage

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